丰满少妇69激情啪啪无-欧美巨大黑人极品精男-十八禁无遮挡99精品国产-国外精品视频在线观看免费-丰满人妻熟妇乱又伦精品-99无码精品二区在线视频

CN EN
Home
About Us
Newpros
1200V 80 mΩ SIC MOSFET
1200V 80 mΩ SIC MOSFET Back
 PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.
Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.
SPECIFICATION

YJD212080NCFG1

Related new products

Portable energy storage power supply special plug-in type fast recovery bridge

1200V 40mΩ SiC MOSFET

1200V 80 mΩ SIC MOSFET

NP – sealed MOSFET for cooling fan

N60V SGT MOSFET

GBU Package Extended 35A-50A High Current Series Products

SOD-123HE TVS Diode

SOD-323FL Schottky

P 40V Trench MOSFET for Load Switch Application

DFN2510 & DF0603 Package ESD Protection Series